IT1111796B - Procedimento per formare una zona fusa stabile nella fusione a zone,senza crogiuolo,di una barra di materiale semiconduttore cristallino - Google Patents

Procedimento per formare una zona fusa stabile nella fusione a zone,senza crogiuolo,di una barra di materiale semiconduttore cristallino

Info

Publication number
IT1111796B
IT1111796B IT20470/79A IT2047079A IT1111796B IT 1111796 B IT1111796 B IT 1111796B IT 20470/79 A IT20470/79 A IT 20470/79A IT 2047079 A IT2047079 A IT 2047079A IT 1111796 B IT1111796 B IT 1111796B
Authority
IT
Italy
Prior art keywords
zone
crucible
procedure
bar
forming
Prior art date
Application number
IT20470/79A
Other languages
English (en)
Italian (it)
Other versions
IT7920470A0 (it
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of IT7920470A0 publication Critical patent/IT7920470A0/it
Application granted granted Critical
Publication of IT1111796B publication Critical patent/IT1111796B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT20470/79A 1978-02-27 1979-02-23 Procedimento per formare una zona fusa stabile nella fusione a zone,senza crogiuolo,di una barra di materiale semiconduttore cristallino IT1111796B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2808401A DE2808401C3 (de) 1978-02-27 1978-02-27 Verfahren zum Einstellen einer stabilen Schmelzzone beim tiegelfreien Zonenschmelzen eines Halbleiterkristallstabes

Publications (2)

Publication Number Publication Date
IT7920470A0 IT7920470A0 (it) 1979-02-23
IT1111796B true IT1111796B (it) 1986-01-13

Family

ID=6033063

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20470/79A IT1111796B (it) 1978-02-27 1979-02-23 Procedimento per formare una zona fusa stabile nella fusione a zone,senza crogiuolo,di una barra di materiale semiconduttore cristallino

Country Status (4)

Country Link
US (1) US4436578A (en])
JP (1) JPS54123586A (en])
DE (1) DE2808401C3 (en])
IT (1) IT1111796B (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3333960A1 (de) * 1983-09-20 1985-04-04 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von versetzungsfreien einkristallstaeben aus silicium
US5409892A (en) * 1988-06-02 1995-04-25 Sumitomo Electric Industries, Ltd. Method of maufacturing superconductor of ceramics superconductive material
JPH0280779U (en]) * 1988-12-09 1990-06-21

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660062A (en) 1968-02-29 1972-05-02 Siemens Ag Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material
DE2019179A1 (de) 1970-04-21 1971-11-04 Siemens Ag Verfahren und Vorrichtung zum Dotieren von Halbleitermaterial beim tiegelfreien Zonenschmelzen
GB1361710A (en) 1972-11-17 1974-07-30 Belov V F Vertical crucible-free zone melting
JPS4991003A (en]) * 1972-12-26 1974-08-30
DE2640641B2 (de) 1976-09-09 1978-06-29 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Einstellen einer stabilen Schmelzzone beim tiegelf reien Zonenschmelzen eines Halbleiterkristallstabes

Also Published As

Publication number Publication date
DE2808401A1 (de) 1979-08-30
JPS54123586A (en) 1979-09-25
JPH0250077B2 (en]) 1990-11-01
US4436578A (en) 1984-03-13
IT7920470A0 (it) 1979-02-23
DE2808401C3 (de) 1984-07-19
DE2808401B2 (de) 1983-06-16

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